HCS12NK65V

HCS12NK65V Apr 2014 HCS12NK65V 650V N-Channel Super Junction MOSFET BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 32 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 12* 7.4* 36* ρ30 200 6 0.6 4.5 PD Power Dissipation (TC =...