HRP80N06K

HRP80N06K HRP80N06K 60V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 90 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested August 2014 BVDSS = 60 V RDS(on) typ = Pȍ ID = 114 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 60 114 * 80 * 400 * ρ25 290 18 180 1.2 -55 to +...