SSM2309GN

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G S BV DSS R DS(ON) ID D The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited for low voltage applications such as DC/DC converters and and general switching applications. SOT-23-3 -30V 75mΩ -3.7A S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance, Junction-ambient3 Rating -30 ± 20 -3.7 -3 -12 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 90 Unit °C/W 2/16/2005 Rev....