SSM2603GY

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Small Package Outline Surface Mount Device S D D SOT-26 G D D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial–industrial applications. BVDSS RDS(ON) ID G -20V 65mΩ -5.0A D S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -20 ±12 -5 -4 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Uni...