N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9980GH,J N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
80V 45mΩ 21A
Pb-free; RoHS-com...
Description
SSM9980GH,J N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
80V 45mΩ 21A
Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK)
G D
S
TO-251 (suffix J)
GD S
TO-252 (suffix H)
DESCRIPTION
The SSM9980Gx acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM9980GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications.
The through-hole version, the SSM9980GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pu...
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