P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM3310GH,J P-channel Enhancement-mode Power MOSFET
2.5V low gate drive capability Simple drive requirement Fast switch...
Description
SSM3310GH,J P-channel Enhancement-mode Power MOSFET
2.5V low gate drive capability Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION
G
D S
The SSM3310GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications. The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
BV DSS R DS(ON) ID
-20V 150mΩ -10A
G D S TO-252 (H)
G D S
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rt...
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