SSM3310GJ

SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION G D S The SSM3310GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications. The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. BV DSS R DS(ON) ID -20V 150mΩ -10A G D S TO-252 (H) G D S TO-251 (J) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rt...