N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description...
Description
SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description
D
G S
The SSM9972GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9972GP in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
BV DSS R DS(ON) ID
60V 18mΩ 60A
G D S TO-263 (S)
Pb-free lead finish (second-level interconnect)
G D S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Rating 60 ±25 60 38 230 89 0.7
Units V V A A A W
W/°...
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