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SSM9972GS

Silicon Standard

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description...


Silicon Standard

SSM9972GS

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Description
SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9972GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9972GP in TO-220, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. BV DSS R DS(ON) ID 60V 18mΩ 60A G D S TO-263 (S) Pb-free lead finish (second-level interconnect) G D S TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Rating 60 ±25 60 38 230 89 0.7 Units V V A A A W W/°...




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