SSM28G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance High peak current capability 3.3V gate driv...
SSM28G45EM
N-CHANNEL INSULATED-GATE BIPOLAR
TRANSISTOR
High input impedance High peak current capability 3.3V gate drive
C C C C
SO-8
G E E E
Absolute Maximum Ratings
Symbol
Parameter
VCE Collector-Emitter Voltage
VGE Gate-Emitter Voltage
VGEP
Pulsed Gate-Emitter Voltage
ICP PD @ TC=25°C1
Pulsed Collector Current Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
VCE ICP
G
Rating 450 ±6 ±8 130 2.5
-55 to 150 -55 to 150
450V 130A
C
E
Units V V V A W °C °C
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
- - 10 µA
ICES
Collector-Emitter Leakage Current (Tj=25°C)
VCE=450V, VGE=0V
- - 10 µA
VCE(sat)
Collector-Emitter Saturation Voltage VGE=3.3V, ICP=130A (Pulsed)
- 3.8 6
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250µA
- -1V
Qg Total Gate Charge
IC=40A
- 74 120 nC
Qge Gat...