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SSM20G45EGJ Dataheets PDF



Part Number SSM20G45EGJ
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Insulated-Gate Bipolar Transistor
Datasheet SSM20G45EGJ DatasheetSSM20G45EGJ Datasheet (PDF)

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ. 130A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G D S TO-251 (suffix J) G DS TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-25.

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SSM20G45EGH SSM20G45EGJ SSM25G45EM


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