TSK20N60S

TSA20N60S, TSK20N60S 600V N-Channel MOSFET TSA20N60S, TSK20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. Features 650V @TJ = 150 ℃ Typ. RDS(on) = 0.16Ω Ultra Low Gate Charge (typ. Qg = 63nC) 100% avalanche tested Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current ...