N-Channel MOSFET
TSB4N60M / TSI4N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced p...
Description
TSB4N60M / TSI4N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V Low gate charge ( typical 16nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)...
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