N-Channel MOSFET
TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET
TSD80R1K3S1/TSU80R1K3S1
800V 4A N-Channel SJ-MOSFET
General Descri...
Description
TSD80R1K3S1/TSU80R1K3S1 800V 4A N-Channel SJ-MOSFET
TSD80R1K3S1/TSU80R1K3S1
800V 4A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features
850V @TJ = 150 ℃ Typ. RDS(on) = 1.1Ω Ultra Low gate charge (typ. Qg = 15nC) 100% avalanche tested
TSD80R1K3S1
TSU80R1K3S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avala...
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