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TSD60R650S1 Dataheets PDF



Part Number TSD60R650S1
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSD60R650S1 DatasheetTSD60R650S1 Datasheet (PDF)

TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. S.

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TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET TSD60R650S1/TSU60R650S1 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.58Ω • Ultra Low gate charge (typ. Qg = 25nC) • 100% avalanche tested TSD60R650S1 TSU60R650S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Ava.


TSF60R650S1 TSD60R650S1 TSU60R650S1


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