TSP60R150WT

TSP60R150WT 600V 22A N-Channel SJ-MOSFET TSP60R150WT 600V 22A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features 650V @TJ = 150 ℃ Max. RDS(on) = 0.15Ω Ultra Low gate charge (typ. Qg = 41nC) 100% avalanche tested Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 600 22.0 13.9 IDM Drain Current – Pulsed (Note 1) 60 VGSS Gate-Source voltage ±30 EAS PD TJ, TSTG TL Singl...