TSD65R600WT

TSD65R600WT/TSU65R600WT 650V 7.5A N-Channel SJ-MOSFET TSD65R600WT/TSU65R600WT 650V 7.5A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. 700V @TJ = 150 ℃ Max. RDS(on) = 0.6Ω Ultra Low gate charge (typ. Qg = 14nC) 100% avalanche tested TSD65R600WT TSU65R600WT TO-252 TO-251 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 650 7.5 4.7 IDM Drain Current – Pulsed (Not...