Document
TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET
TSD60R580WT/TSU60R580WT
600V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
• 600V @TJ = 25 ℃ • Typ. RDS(on) = 0.5Ω • Ultra Low gate charge (typ. Qg = 14.5nC) • 100% avalanche tested
TSD60R580WT
TSU60R580WT
TO-252
Absolute Maximum Ratings
TO-251
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Av.