TSI7N60M

TSB7N60M/TSI7N60M TSB7N60M/TSI7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 7.0A,600V,Max.RDS(on)=1.3 Ω @ VGS =10V Low gate charge(typical 29nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability TSB7N60M TSI7N60M TO-263 TO-262 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy...