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TSF20N60MR
TSF20N60MR
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 20A,600V,RDS(on)=0.36 Ω @ VGS =10V • Low gate charge(typical 57nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR IAR PD TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive avalanche.