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TSF20N60MR Dataheets PDF



Part Number TSF20N60MR
Manufacturers Truesemi
Logo Truesemi
Description N-Channel MOSFET
Datasheet TSF20N60MR DatasheetTSF20N60MR Datasheet (PDF)

TSF20N60MR TSF20N60MR 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Featur.

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TSF20N60MR TSF20N60MR 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 20A,600V,RDS(on)=0.36 Ω @ VGS =10V • Low gate charge(typical 57nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Repetitive avalanche.


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