DatasheetsPDF.com

TSD4N60M

Truesemi
Part Number TSD4N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSD4N60M TSD4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced pl...
Datasheet PDF File TSD4N60M PDF File

TSD4N60M
TSD4N60M

Overview
TSD4N60M TSD4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 2.
8A,600V,Max.
RDS(on)=2.
50 Ω @ VGS =10V • Low gate charge(typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)