N-Channel MOSFET
TSD18N20M
TSD18N20M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced ...
Description
TSD18N20M
TSD18N20M
200V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V Low gate charge(typical 22nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
TC = 25℃ TC = 100℃
IDM Pulsed Drain Current
(Note 1)
IAS Single Pulsed Avalanche Current (Note 2)
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Aval...
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