TSF10N65M

TSP10N65M/TSF10N65M TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V Low gate charge(typical 48nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) -Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Resistance Characteristics TSP10N65M TSF10N65M 650 ± 30 10.0 10.0* 6.0 6.0* 40 40* 709 16.2 4.5 162 52 1.3 0.42 -55 to +150 300 Symbol RθJC RθCS RθJA Parameter Thermal Resistance,Junction-to-Case Thermal Resistanc...