N-Channel MOSFET
BYD Microelectronics Co., Ltd.
BF9060BSNL
60V N-Channel MOSFET
General Description
This Power MOSFET device has specif...
Description
BYD Microelectronics Co., Ltd.
BF9060BSNL
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement.
Features
z VDS =60 V z ID =100A z Typical RDS(ON) =4.5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD TJ,Tstg TL
Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note2) (Note1)
Value 60 100 400 ±20
1900 35 310
-5...
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