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BF96N60

BYD
Part Number BF96N60
Manufacturer BYD
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF96N60/ BF96N60L 600V N-Channel MOSFET General Description These N-Channel enhancement...
Datasheet PDF File BF96N60 PDF File

BF96N60
BF96N60

Overview
BYD Microelectronics Co.
, Ltd.
BF96N60/ BF96N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features z VDS =600 V z ID =5.
5A z RDS(ON) =1.
7 Ω TYP(VGS=10V,ID=2.
75A) z CRSS (typical 7.
0pF) z Fast switching Absolute Maximum Ratings S...


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