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SLF50R290SJ Dataheets PDF



Part Number SLF50R290SJ
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLF50R290SJ DatasheetSLF50R290SJ Datasheet (PDF)

SLB/D/F/I/P /U50R290SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well s.

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SLB/D/F/I/P /U50R290SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD50R290SJ,SLU50R290SJ,SLP50R290SJ SLF50R290SJ, SLB50R290SJ, SLI50R290SJ 500V N-Channel MOSFET Features -14A, 500V, RDS(on) typ.= 0.27Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK / .


SLP50R290SJ SLF50R290SJ SLB50R290SJ


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