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SLF65R190SJ Dataheets PDF



Part Number SLF65R190SJ
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLF65R190SJ DatasheetSLF65R190SJ Datasheet (PDF)

SLP65R190SJ / SLF65R190SJ SLP65R190SJ / SLF65R190SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features.

  SLF65R190SJ   SLF65R190SJ


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SLP65R190SJ / SLF65R190SJ SLP65R190SJ / SLF65R190SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avala.


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