N-Channel MOSFET
SLB/D/F/I/P /U80R500SJ
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Jun...
Description
SLB/D/F/I/P /U80R500SJ
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ
800V N-Channel MOSFET
Features
-11A, 800V, RDS(on) typ.= 0.46Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
38nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK I2-PAK / ...
Similar Datasheet