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MBQ40T65FESC

MagnaChip

IGBT

MBQ40T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trenc...


MagnaChip

MBQ40T65FESC

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Description
MBQ40T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FESC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.3mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.) @diF/dt = 1000A/ μs  Maximum junction temperature 175°C Applications  PFC  UPS  PV Inverter  Welder  IH Cooker G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tjvjmax Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C Diode forward current limited by Tvjmax TC=25°C TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage Power dissipation Short circuit withstand time VCC...




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