MDE1991

MDE1991– Single N-Channel Trench MOSFET 100V MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4mΩ General Description Features The MDE1991 uses advanced MagnaChip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 120A @VGS = 10V  RDS(ON) < 4.4 mΩ @VGS = 10V  100% UIL Tested D D G S TO-263 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistan...