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MDF1723 Dataheets PDF



Part Number MDF1723
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF1723 DatasheetMDF1723 Datasheet (PDF)

MDF1723– Single N-Channel Trench MOSFET 40V MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6mΩ General Description The MDF1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1723 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 40V  ID = 85A @VGS = 10V  RDS(ON) < 2.6 mΩ @VGS = 10V  100% UIL Tested  100% Rg Teste.

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MDF1723– Single N-Channel Trench MOSFET 40V MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6mΩ General Description The MDF1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1723 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 40V  ID = 85A @VGS = 10V  RDS(ON) < 2.6 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D G DS TO-220F Absolute Maximum Ratings Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2021. Version 1.2 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 40 V ±20 V 85.0 56.9 A 340 34.8 W 13.9 162.0 mJ -55~150 oC Symbol RθJA RθJC Rating 62.5 3.6 Unit oC/W Magnachip Semiconductor Ltd. MDF1723– Single N-Channel Trench MOSFET 40V Ordering Information Part Number MDF1723TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (TJ = 25oC unless otherwise specified) Characteristics Symbol Test Condition Min Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 Drain Cut-Off Current IDSS VDS = 32V, VGS = 0V - Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 40A - Forward Transconductance gfs VDS = 10V, ID = 40A - Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Qg - Qgs VDS = 20V, ID = 40A, VGS = 10V - Qgd - Ciss - Crss VDS = 20V, VGS = 0V, f = 1.0MHz - Coss - td(on) - tr VGS = 10V, VDS =20V, - td(off) ID = 40A , RG = 3.0Ω - tf - Rg f=1 MHz - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD IS = 40A, VGS = 0V - Body Diode Reverse Recovery Time trr - IF = 40A, dl/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr - Typ 2.2 111 88.3 22.9 16.5 5755 203 1830 24.3 14.7 84.8 42.7 3.0 0.9 55.7 82.0 Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 18.0A, VGS = 10V. Max Unit V 4.0 1.0 μA ±0.1 2.6 mΩ - S - - nC - - - pF - - ns - - - Ω 1.2 V ns nC Jan. 2021. Version 1.2 2 Magnachip Semiconductor Ltd. I Drain Current [A] D MDF1723– Single N-Channel Trench MOSFET 40V Drain-SourceOn-Resitance[mohm] 90 10 V 5.0 V 6.0 V 80 70 60 4.5 V 50 4.0 V 40 30 20 3.5 V 10 0 0 1 2 3 4 5 V , Drain-Source Voltage [V] DS Fig.1 On-Region Characteristics 2.5 ※ Notes : 1. VGS = 10 V 2. ID = 40 A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature DS(ON) R [mΩ ], Drain-Source On-Resistance Drain-Source On-Resistance [mΩ] 4 3 VGS = 10V 0 0 1 2 3 4 10 20 30 ID, Drain 40 50 Current 60 [A 7 VGS = 10V 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 20 18 ※ Notes : ID = 40A 16 14 12 10 8 6 TC = 25℃ 4 2 0 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage RDS(ON), (Normalized) Drain-Source On-Resistance I , Drain Current [A] D 90 * Notes : V = 10V DS 80 70 60 T =25oC 50 A 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V , Gate-Source Voltage [V] GS Fig.5 Transfer Characteristics IDR, Reverse Drain Current [A] ※ Notes : 100 V = 0V GS 10 TA=25℃ 1 0.0 0.3 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Jan. 2021. Version 1.2 3 Magnachip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDF1723– Single N-Channel Trench MOSFET 40V ID, Drain Current [A] 10 ※ Note : ID = 40A VDS = 50V 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 102 100 us 101 Operation in This Area is Limited by R DS(on) 100 10-1 10-1 Single Pulse T =Max rated J TC=25℃ 100 101 VDS, Drain-Source Voltage [V] 1 ms 10 ms 100 ms DC 102 Fig.9 Maximum Safe Operating Area D=0.5 100 0.2 0.1 0.05 10-1 0.02 0.01 10-2 10-3 single pulse 10-4 10-5 10-4 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC .


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