Document
MDF1723– Single N-Channel Trench MOSFET 40V
MDF1723
Single N-channel Trench MOSFET 40V, 85A, 2.6mΩ
General Description
The MDF1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1723 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 40V
ID = 85A @VGS = 10V
RDS(ON)
< 2.6 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
G DS
TO-220F
Absolute Maximum Ratings
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jan. 2021. Version 1.2
1
G S
Symbol VDSS VGSS ID IDM
PD
EAS TJ, Tstg
Rating
Unit
40
V
±20
V
85.0
56.9
A
340
34.8 W
13.9
162.0
mJ
-55~150
oC
Symbol RθJA RθJC
Rating 62.5 3.6
Unit oC/W
Magnachip Semiconductor Ltd.
MDF1723– Single N-Channel Trench MOSFET 40V
Ordering Information
Part Number MDF1723TH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
40
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
Drain Cut-Off Current
IDSS
VDS = 32V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 40A
-
Forward Transconductance
gfs
VDS = 10V, ID = 40A
-
Dynamic Characteristics
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance
Qg
-
Qgs
VDS = 20V, ID = 40A, VGS = 10V
-
Qgd
-
Ciss
-
Crss
VDS = 20V, VGS = 0V, f = 1.0MHz
-
Coss
-
td(on)
-
tr
VGS = 10V, VDS =20V,
-
td(off)
ID = 40A , RG = 3.0Ω
-
tf
-
Rg
f=1 MHz
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 40A, VGS = 0V
-
Body Diode Reverse Recovery Time
trr
-
IF = 40A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
-
Typ
2.2 111
88.3 22.9 16.5 5755 203 1830 24.3 14.7 84.8 42.7 3.0
0.9 55.7 82.0
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 18.0A, VGS = 10V.
Max
Unit
V
4.0
1.0 μA
±0.1
2.6
mΩ
-
S
-
-
nC
-
-
-
pF
-
-
ns
-
-
-
Ω
1.2
V
ns
nC
Jan. 2021. Version 1.2
2
Magnachip Semiconductor Ltd.
I Drain Current [A]
D
MDF1723– Single N-Channel Trench MOSFET 40V
Drain-SourceOn-Resitance[mohm]
90
10 V
5.0 V
6.0 V
80
70
60
4.5 V
50 4.0 V
40
30
20 3.5 V
10
0
0
1
2
3
4
5
V , Drain-Source Voltage [V] DS
Fig.1 On-Region Characteristics
2.5
※ Notes : 1. VGS = 10 V 2. ID = 40 A
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
DS(ON) R [mΩ ], Drain-Source On-Resistance
Drain-Source On-Resistance [mΩ]
4
3
VGS = 10V
0
0
1
2
3
4
10
20
30
ID, Drain
40
50
Current 60
[A 7
VGS
=
10V
2
1
0 0 10 20 30 40 50 60 70 80 90 100 110
ID, Drain Current [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
20
18
※ Notes :
ID = 40A
16
14
12
10
8
6 TC = 25℃
4
2
0
4
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with Gate to Source Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
I , Drain Current [A] D
90 * Notes : V = 10V
DS
80
70
60
T =25oC
50
A
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V , Gate-Source Voltage [V] GS
Fig.5 Transfer Characteristics
IDR, Reverse Drain Current [A]
※ Notes :
100
V = 0V GS
10 TA=25℃
1
0.0
0.3
0.6
0.9
1.2
1.5
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Jan. 2021. Version 1.2
3
Magnachip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDF1723– Single N-Channel Trench MOSFET 40V
ID, Drain Current [A]
10 ※ Note : ID = 40A VDS = 50V
8
6
4
2
0
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102 100 us
101 Operation in This Area is Limited by R
DS(on)
100
10-1 10-1
Single Pulse
T =Max rated J
TC=25℃
100
101
VDS, Drain-Source Voltage [V]
1 ms 10 ms 100 ms DC
102
Fig.9 Maximum Safe Operating Area
D=0.5 100 0.2
0.1 0.05 10-1 0.02
0.01 10-2
10-3 single pulse
10-4
10-5
10-4
※ Notes :
Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
.