N-Channel MOSFET
MMIS60R900P Datasheet
MMIS60R900P
600V 0.9Ω N-channel MOSFET
Description
MMIS60R900P is power MOSFET using Magnachip’...
Description
MMIS60R900P Datasheet
MMIS60R900P
600V 0.9Ω N-channel MOSFET
Description
MMIS60R900P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.9
3 4.5 12.3
Unit V Ω V A nC
Package & Internal Circuit
D
G D S
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code
Marking
MMIS60R900PTH 60R900P
Temp. Range -55 ~ 150℃
Package
TO-251-VS (IPAK-VS)
Packing Tube
RoHS Status Halogen Free
May. 2016 Revision 1.1
1
Magnachip Semiconductor Ltd.
MMIS60R900P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
VDSS VGSS
ID
IDM P...
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