MMFT60R195PC

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195Ω N-channel MOSFET  Description MMFT60R195PC is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.195 3 20 44 Unit V Ω V A nC  Package & Internal Circuit D GDS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMFT60R195PCTH T60R195PC Temp. Range -55 ~ 150℃ Package TO-220FT Packing Tube RoHS Status Halogen Free Jun. 2021. Revision 1.3 1 Magnachip Semiconductor Ltd. MMFT60R195PC Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage VDSS VGSS Continuous drain current(1) ID Pulsed drain current(2) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(3) Storage temperature Maximum operating junction temperature 1) Id limited by maximum junction temperature 2) Pulse width tP limi...