MDF7N50B

MDP7N50B / MDF7N50B N-channel MOSFET 500V MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDP/F7N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F7N50B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP7N50B MDF7N50B 500 ±30 7.0 7.0* 4.2 4.2* 28 28* 114 36 0.91 0.29 11.4 4.5 ...