MDIS5N50

MDIS5N50 N-channel MOSFET 500V MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDIS5N50 uses advanced Magnachip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS5N50 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  VDS = 550V @ Tjmax  ID = 4.4A @VGS = 10V  RDS(ON) ≤ 1.4Ω @VGS = 10V Applications  Power Supply  PFC  Ballast TO-251-VS (IPAK-VS) Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 550 ±30 4.4 2.8 17.6 70 0.56 4.5 230 -55~150 Unit V V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 1.8 Unit oC/W Jan. 2021. Version1.1 1 Magnachip Semiconductor Ltd. MDIS5N50 N-channel MOSFET 500V Ordering Information Part Number MDIS5N50TH Temp. Range -55~150oC Package TO-251-VS (IPAK-VS) Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta = 25oC) Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Cu...