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MDZ1N60 N-channel MOSFET 600V
MDZ1N60
N-Channel MOSFET 600V, 0.4 A, 8.5Ω
General Description
The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications.
Features
VDS = 600V ID = 0.4A RDS(ON) ≤ 8.5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast
TO-92
GDS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Lead1) Thermal Resistance, Junction-to-Ambient
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
Dv/dt EAS TJ, Tstg
Rating 600 ±30 .