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MDZ1N60 Dataheets PDF



Part Number MDZ1N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDZ1N60 DatasheetMDZ1N60 Datasheet (PDF)

MDZ1N60 N-channel MOSFET 600V MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 600V  ID = 0.4A  RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V Applications  Power supply  Battery charger  Ballast TO-92 GDS Absolute .

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MDZ1N60 N-channel MOSFET 600V MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 600V  ID = 0.4A  RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V Applications  Power supply  Battery charger  Ballast TO-92 GDS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Lead1) Thermal Resistance, Junction-to-Ambient TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 600 ±30 .


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