N-Channel Trench MOSFET
MDIS2N65B N-channel MOSFET 650V
MDIS2N65B
N-Channel MOSFET 650V, 1.95A, 4.5Ω
General Description
The MDIS2N65B uses ad...
Description
MDIS2N65B N-channel MOSFET 650V
MDIS2N65B
N-Channel MOSFET 650V, 1.95A, 4.5Ω
General Description
The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications.
Features
VDS = 650V ID = 1.95A RDS(ON) ≤ 4.5Ω
@VGS = 10V @VGS = 10V
Applications
Power supply Battery charger Ballast
G DS
TO-251-VS (I-PAK-VS)
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Sep. 2013 Version 1.0
1
TC=25oC TC=100oC
TC=...
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