N-Channel Trench MOSFET
MDA0531E– Common-Drain N-Channel Trench MOSFET 30V
MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ
General...
Description
MDA0531E– Common-Drain N-Channel Trench MOSFET 30V
MDA0531E
Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ
General Description
The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V.
Features
VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.5V
Applications
Unidirectional or Bi-directional Load Switch Lithium-Ion Battery Packs Portable Battery Protection Module
Absolute Maximun Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulse Drain Current Power Dissipation for Single Operation(1)
Junction and Storage Temperature Range
TA=25oC TA=70oC
TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State) ...
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