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MDV5524

MagnaChip
Part Number MDV5524
Manufacturer MagnaChip
Description Dual N-Channel Trench MOSFET
Published Apr 10, 2017
Detailed Description MDV5524 – Asymmetric Dual N-Channel Trench MOSFET 30V MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V General Desc...
Datasheet PDF File MDV5524 PDF File

MDV5524
MDV5524

Overview
MDV5524 – Asymmetric Dual N-Channel Trench MOSFET 30V MDV5524 Asymmetric Dual N-channel Trench MOSFET 30V General Description The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV5524 is suitable for DC/DC converter and general purpose applications.
Features FET1 FET2  VDS = 30V  ID = 24.
5A VDS = 30V ID = 31.
2A @VGS = 10V  RDS(ON) < 14.
4mΩ < 21.
3mΩ < 12.
6mΩ @VGS = 10V < 15.
6mΩ @VGS = 4.
5V  100% UIL Tested  100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 D1 D14D13D12G11 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics ...


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