MDS9652E

MDS9652E– Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General Description The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.5V P-Channel VDS = -30V ID = -6.1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52m @ VGS = -4.5V Applications  Inverters  General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating N-Ch P-Ch 30 -30 ±20 ±20 7.2 -6.1 4....