N-Channel Trench MOSFET
MDE1752– N-Channel Trench MOSFET 40V, 66A, 8.0mΩ
MDE1752
N-Channel Trench MOSFET 40V, 66A, 8.0mΩ
General Description
T...
Description
MDE1752– N-Channel Trench MOSFET 40V, 66A, 8.0mΩ
MDE1752
N-Channel Trench MOSFET 40V, 66A, 8.0mΩ
General Description
The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V
Applications
Inverters General purpose applications
D
G S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Characteristics (Note 2)
Power Dissipation for Single Operation
Single Pulse Avalanche Energy Junction and Storage Temperature Range
TC=25oC
TC=25oC TA=25oC
(Note 3)
Symbol VDSS VGSS ID IDM
PD
EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1...
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