RU6Z12P

RU6Z12P N-Channel Advanced Power MOSFET Features 650V/12A, RDS (ON) =340mΩ(Typ.)@VGS=10V Ultra Low Rdson Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications AC/DC Power Conversion in Switched Mode Power Supplies (SMPS) Adapter LED driver Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed G DS TO220F D G S N-Channel MOSFET Rating Unit TC=25°C 650 ±30 150 -55 to 150 12 V °C °C A ...