RU4H10P

Features 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 18pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Available RU4H10P N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220F Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Ra...