N-Channel Advanced Power MOSFET
RU12200R
N-Channel Advanced Power MOSFET
Features
• 120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V
• Reliable and Rugged • Ul...
Description
RU12200R
N-Channel Advanced Power MOSFET
Features
120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V
Reliable and Rugged Ultra Low On-Resistance 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)
Applications
Uninterruptible Power Supplies Synchronus Rectification in DC/DC and AC/DC Converters
Pin Description
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=2...
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