RU190N10S

RU190N10S N-Channel Advanced Power MOSFET Features · 100V/190A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Pin Description TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=100°C Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed StoraEgeASTemperature Range -55 to 150 Copyright© Ruichips Semiconductor C...