RU1HE12L
N-Channel Advanced Power MOSFET
MOSFET
Features
100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Ma...
