Document
RU70E4D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 70V/4A, RDS (ON) =80mΩ (Typ.) @ VGS=10V RDS (ON) =90mΩ (Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Ultra Low On-Resistance
• Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management • DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
PD
②
RθJA
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
70 ±20 150 -55 to 150
4
16
①
4 3.4 2.5 1.6 50
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. B – APR., 2011
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