RU602B

RU602B N-Channel Advanced Power MOSFET Features 60V/1.5A, RDS (ON) =220mΩ(Typ.)@VGS=10V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converter Battery Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TA=25°C 60 ±25 150 -55 to 150 1.1 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA...