RU60E25K

RU60E25K N-Channel Advanced Power MOSFET Features 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.5V ESD protected Reliable and Rugged Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Desktop Computer, Portable Equipment DC/DC Converters Pin Description G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– AUG...