RU60E25L

RU60E25L N-Channel Advanced Power MOSFET MOSFET Features 60V/25A, RDS (ON) =35mΩ(Typ.)@VGS=10V RDS (ON) =42mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±20 175 -55 to 175 25 ① 100 ② 25 19 50 25 3 150 Unit V °C °C A A A W °C/W m...