N-Channel Advanced Power MOSFET
RU4090L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/90A, RDS (ON) =4mΩ(Typ.)@VGS=10V
• Super High Dense Cell ...
Description
RU4090L
N-Channel Advanced Power MOSFET
MOSFET
Features
40V/90A, RDS (ON) =4mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-252
Applications
Motor Drivers Switch Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
Rating
40 ±20 175 -55 to 175
①
...
Similar Datasheet