RU30120M

RU30120M N-Channel Advanced Power MOSFET Features 30V/120A, RDS (ON) =2mΩ(Typ.)@VGS=10V RDS (ON) =2.9mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications DC/DC Conversion Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 30 ±20 150 -55 to 150 ① 50 V °C °C A ② 410 ① 120 ① 97...